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| INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 m. These detectors offer better characteristics than PbSe photoconductive detectors. Features Applications l Thermoelectrically cooled type: high sensitivity and high-speed response l Metal dewar type available for low light measurement l Long-wavelength cut-off of up to 3.8 m l Easy-to-use detector/preamp modules available l Gas analysis l Infrared radiation measurement l Infrared spectrophotometry l FTIR Accessories (Optional) l Heatsink for one-stage TE-cooled type A3179 l Heatsink for two-stage TE-cooled type A3179-01 l Temperature controller C1103-04 l Infrared detector module with preamp P4631-01 (Integrated with P8079-21) l Amplifiers for InAs photovoltaic detector C4159-05 (only for P7163) s Specifications / Absolute maximum ratings Type No. D im ensional outline/ W indow m aterial * Package Cooling Active area (mm) 1 Thermistor power dissipation (mW) 0.2 Absolute maximum ratings Operating Reverse temperature voltage Topr VR (V) (C) 0.5 -40 to +60 Storage temperature Tstg (C) -55 to +60 P8079-01 TO-5 Non-cooled /S P8079-11 One-stage TE-cooled TO-8 /S P8079-21 Two-stage TE-cooled P7163 Metal dewer LN2 /S * Window material S: sapphire glass s Electrical and optical characteristics (Typ. unless otherwise noted) M easurem ent Photo Peak Cut-off condition sensitivity sensitivity wavelength S E le m en t wavelength te m pe ra tu re c =p p T (C) 25 -10 -30 -196 (m) 3.45 3.30 3.25 3.00 (m) 3.8 3.6 3.5 3.1 (A/W) 1.1 1.3 Shunt resistance Rsh D (p, 1200, 1) Typ. Min. (cm *H z 1/2 /W ) (cm *H z 1/2 /W ) 1.5 x 109 2 x 109 7.5 x 109 1 x 1010 1.5 x 1010 2 x 1010 3.5 x 1011 6 x 1011 NEP =p Rise time Term inal tr capacitance VR=0 V Ct RL=50 VR=0 V 0 to 63 % f=1 MHz (s) 0.1 0.1 (pF) 80 10 5 150 Type No. P8079-01 P8079-11 P8079-21 P7163 () 10 80 200 1 x 105 (W/Hz1/2) 4.4 x 10-11 8.9 x 10-12 4.4 x 10-12 1.5 x 10-13 1 InAs photovoltaic detector s Spectral response (D*) 1012 P7163 (T= -196 C) 1.2 10 11 P8079 series, P7163 s Spectral response (Typ.) 1.4 (Typ.) PHOTO SENSITIVITY (A/W) D* (,1200,1) (cm * Hz1/2/W) 1.0 T=25 C 0.8 T= -10 C 0.6 T= -30 C 0.4 0.2 1010 P8079-21 (T= -30 C) 10 9 P8079-01 (T=25 C) 108 1 2 3 4 5 6 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 WAVELENGTH (m) KIRDB0165EA WAVELENGTH (m) KIRDB0183EA s S/N vs. chopping frequency (P7163) 103 LOAD RESISTANCE: 1 k SUPPLY VOLTAGE: 0 V ELEMENT TEMPERATURE: -196 C S (Typ.) s Shunt resistance vs. element temperature 1 k S/N (ARB. UNIT) 102 SHUNT RESISTANCE 106 100 N 101 10 100 102 103 104 105 1 -40 -20 0 20 40 CHOPPING FREQUENCY (Hz) KIRDB0064ED ELEMEMT TEMPERATURE (C) KIRDB0182EA 2 InAs photovoltaic detector s Current vs. voltage of TE-cooled type 1.6 1.4 1.2 ONE-STAGE TE-COOLED (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) P8079 series, P7163 s Cooling characteristics of TE-cooled type 30 20 10 0 -10 -20 -30 -40 -50 TWO-STAGE TE-COOLED TYPE ONE-STAGE TE-COOLED TYPE (Typ. Ta=25 C, thermal resistance of heat-sink=3 C/W) 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TWO-STAGE TE-COOLED ELEMENT TEMPERATURE (C) CURRENT (A) 0 0.4 0.8 1.2 1.6 VOLTAGE (V) KIRDB0115EB TE-COOLED CURRENT (A) KIRDB0181EA s Thermistor temperature characteristic 10 6 (Typ.) RESISTANCE () 105 104 103 -40 -20 0 20 ELEMENT TEMPERATURE (C) KIRDB0116EA s Measurement circuit CHOPPER 1200 Hz DETECTOR BAND-PASS FILTER r.m.s. METER BLACK BODY 500 K fo=1200 Hz f=120 Hz INCIDENT ENERGY: 2.64 W/cm2 KIRDC0004EA 3 InAs photovoltaic detector s Dimensional outlines (unit: mm) P8079-01 9.1 0.3 8.1 0.1 WINDOW 5.5 0.1 P8079 series, P7163 P8079-11/-21 15.3 0.2 14 0.2 4.3 0.2 2.3 0.2 0.4 MAX. 18 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 5.1 0.2 0.45 LEAD 10.2 0.2 1.0 MAX. 12 MIN. DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR P8079-11 P8079-21 a 4.5 0.2 6.9 0.2 PHOTOSENSITIVE SURFACE CASE 5.1 0.2 KIRDA0119EA 5.1 0.2 a 10 0.2 WINDOW 10 0.2 KIRDA0120EA P7163 LN2 FILL PORT 12.5 s Spectral response 1012 (Typ.) 51 1 D* (,1200,1) (cm * Hz1/2/W) 1011 P7163 (T= -196 C) P8079-21 (T= -30 C) 32 1 63.5 1 28.5 PUMP-OUT PIPE 9.5 44.5 1 46 1 1010 72 1 102 1 95 1 OUTPUT PIN 6.5 172 2 PHOTOSENSITIVE SURFACE 109 P8079-11 (T= -10 C) P8079-01 (T=25 C) 108 1.5 37 1 2.0 2.5 3.0 3.5 4.0 10 0.5 66.8 1 10 1 WAVELENGTH (m) KIRDB0358EA DETECTOR (ANODE) NC DETECTOR (CATHODE) KIRDA0033ED Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1027E06 Mar. 2007 DN 4 |
Price & Availability of P807907
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